# 2D materials boost p-type transistor performance, paving way for future tech

**URL:** <https://community.materialssquare.com/t/2d-materials-boost-p-type-transistor-performance-paving-way-for-future-tech/1053>\
**Category:** News\
**Created:** [December 17, 2024, 4:15pm UTC](https://community.materialssquare.com/t/2d-materials-boost-p-type-transistor-performance-paving-way-for-future-tech/1053 "2024-12-17T16:15:39Z")\
**Posts on this page:** 1\
**Page:** 1

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**Author:** ![gabriele1](https://yyz1.discourse-cdn.com/flex003/user_avatar/community.materialssquare.com/gabriele1/32/20_2.png) [@gabriele1](https://community.materialssquare.com/u/gabriele1)\
**Post date:** [December 17, 2024, 4:15pm UTC](https://community.materialssquare.com/t/2d-materials-boost-p-type-transistor-performance-paving-way-for-future-tech/1053/1 "2024-12-17T16:15:39Z")

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This article highlights a breakthrough in p-type field-effect transistors (FETs) using two-dimensional (2D) materials, specifically molybdenum diselenide (MoSe₂) and tungsten diselenide (WSe₂). Researchers at Penn State developed a novel strategy combining substitutional doping and thickness control to address performance limitations of 2D p-type transistors. By doping the contact regions more heavily while maintaining thinner, lightly doped mid-channel regions, the team significantly reduced contact resistance, achieving high ON-currents and efficient gate control. This approach, coupled with advanced fabrication techniques, enhances the potential for 2D transistors in energy-efficient electronics, paving the way for next-generation circuits and complementing silicon-based technology. Future goals include scaling production with large-area growth methods like chemical vapor deposition (CVD).

For more details, please continue reading the full article under the following link:

> **[2D materials boost p-type transistor performance, paving way for future tech](https://phys.org/news/2024-12-2d-materials-boost-p-transistor.html)**
>
> After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their limits, which is preventing engineers from further reducing their size without affecting their performance. To continue...

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In general, if you enjoy reading this kind of scientific news articles, I am always keen to connect with fellow researchers in materials science, including the possibility to discuss about any potential interest in the Materials Square cloud-based online platform ( [www.matsq.com](http://www.matsq.com) ), designed for streamlining the execution of materials and molecular modelling simulations!

The Materials Square platform in fact provides extensive web-based functionalities for computational chemistry/materials research and training/education purposes, as detailed also in the following PDF brochure: [https://www.materialssquare.com/wp-content/uploads/Materials\_Square\_Brochure\_2022-compressed\_1674181754.pdf](https://www.materialssquare.com/wp-content/uploads/Materials_Square_Brochure_2022-compressed_1674181754.pdf)

Many thanks for your interest and consideration,

Dr. Gabriele Mogni  
Technical Consultant and EU Representative of Virtual Lab Inc., the parent company of the Materials Square platform  
Website: [Home | Virtual Lab Inc.](http://www.virtuallab.co.kr/en/)  
Email: gabriele@simulation.re.kr

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