# KAIST researchers developed a novel ultra-low power memory for neuromorphic computing

**URL:** <https://community.materialssquare.com/t/kaist-researchers-developed-a-novel-ultra-low-power-memory-for-neuromorphic-computing/107>\
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**Created:** [April 5, 2024, 9:50am UTC](https://community.materialssquare.com/t/kaist-researchers-developed-a-novel-ultra-low-power-memory-for-neuromorphic-computing/107 "2024-04-05T09:50:29Z")\
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**Post date:** [April 5, 2024, 9:50am UTC](https://community.materialssquare.com/t/kaist-researchers-developed-a-novel-ultra-low-power-memory-for-neuromorphic-computing/107/1 "2024-04-05T09:50:29Z")

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Researchers at KAIST have developed an ultra-low power memory device for neuromorphic computing, presenting a major breakthrough in memory technology. Their next-generation phase change memory device significantly reduces power consumption and fabrication costs. By electrically forming a nanoscale phase changeable filament, the device consumes 15 times less power than traditional phase change memory, merging the speed of DRAM with the non-volatility of NAND flash memory. This innovation opens avenues for high-density memory and neuromorphic computing systems, promising advancements in electronic engineering and artificial intelligence hardware:

> **[KAIST researchers developed a novel ultra-low power memory for neuromorphic...](https://www.eurekalert.org/news-releases/1040123)**
>
> Professor Shinhyun Choi's team in the School of Electrical Engineering published a paper in Nature on the development of a next-generation ultra-low-power Phase Change Memory device that can replace DRAM and NAND flash memory.