# Scientists develop fatigue-free ferroelectric material

**URL:** <https://community.materialssquare.com/t/scientists-develop-fatigue-free-ferroelectric-material/382>\
**Category:** News\
**Created:** [June 7, 2024, 1:06pm UTC](https://community.materialssquare.com/t/scientists-develop-fatigue-free-ferroelectric-material/382 "2024-06-07T13:06:17Z")\
**Posts on this page:** 1\
**Page:** 1

<div class="post-metadata">

**Author:** ![gabriele1](https://yyz1.discourse-cdn.com/flex003/user_avatar/community.materialssquare.com/gabriele1/32/20_2.png) [@gabriele1](https://community.materialssquare.com/u/gabriele1)\
**Post date:** [June 7, 2024, 1:06pm UTC](https://community.materialssquare.com/t/scientists-develop-fatigue-free-ferroelectric-material/382/1 "2024-06-07T13:06:17Z")

</div>

Researchers from the Chinese Academy of Sciences have developed a fatigue-free ferroelectric material using sliding ferroelectricity. This innovation addresses the common issue of performance degradation in conventional ferroelectric materials due to polarization fatigue. The new material, created with a bilayer 3R-MoS₂ dual-gate device, retains its memory performance even after extensive switching cycles. Theoretical calculations suggest that its fatigue-free property is due to immobile charged defects, providing a significant advancement for applications in non-volatile memory, sensing, and energy conversion devices.

For more details, read the full article here:

> **[Scientists develop fatigue-free ferroelectric material](https://phys.org/news/2024-06-scientists-fatigue-free-ferroelectric-material.html)**
>
> Researchers at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences, in collaboration with research groups from the University of Electronic Science and Technology of China and Fudan University, have...