Researchers have designed a series of layered topological semimetals, Dy₃Sn₇ and Tb₃Sn₇, that exhibit extraordinary Hall response due to their noncoplanar magnetic structures and topological electronic states. These materials, characterized by a high Hall conductivity of over 42,000 Ω⁻¹⋅cm⁻¹ and a significant anomalous Hall angle of 0.17, leverage the combination of magnetic sublattices with differing anisotropies and topological semimetal frameworks. The materials also demonstrate exceptional charge carrier mobility and electrical conductivity, making them promising candidates for future applications in data storage and spintronics. The innovative chemical design strategy employed in this study could pave the way for developing complex magnets tailored for advanced technological uses.
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https://www.nature.com/articles/s41467-024-54203-3
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