Researchers at the Institute of Nano Science and Technology (INST) in Mohali have identified Janus Sb₂XSX’ monolayers as promising materials for next-generation electronic devices. These two-dimensional structures exhibit vertical asymmetry, enabling tunable intrinsic electric fields and piezoelectric properties. Their unique electronic characteristics, including Rashba spin-splitting and spin Hall effects, position them as strong candidates for energy-efficient electronics, flexible devices, and spintronic applications. The study, published in the Journal of Applied Physics, underscores the potential of Janus monolayers in advancing multifunctional electronic technologies.
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