KAIST researchers developed a novel ultra-low power memory for neuromorphic computing

Researchers at KAIST have developed an ultra-low power memory device for neuromorphic computing, presenting a major breakthrough in memory technology. Their next-generation phase change memory device significantly reduces power consumption and fabrication costs. By electrically forming a nanoscale phase changeable filament, the device consumes 15 times less power than traditional phase change memory, merging the speed of DRAM with the non-volatility of NAND flash memory. This innovation opens avenues for high-density memory and neuromorphic computing systems, promising advancements in electronic engineering and artificial intelligence hardware: