Researchers have uncovered nearly perfect spin polarization in noncollinear antiferromagnets, a breakthrough for spintronics. These materials, like Mn₃GaN, exhibit spin-polarized states in a broad range of their Fermi surfaces, enabling extraordinary tunneling magnetoresistance (ETMR) in antiferromagnetic tunnel junctions (AFMTJs). By combining antiferromagnetic Mn₃GaN with perovskite SrTiO₃ as a tunneling barrier, the study demonstrated ETMR values as high as 10⁴%, surpassing conventional magnetoresistive effects. This property arises from momentum-dependent spin polarization in noncollinear configurations, which aligns spin states across conduction channels for efficient tunneling. These findings open pathways for advanced spintronic devices, offering ultrafast operation, greater data density, and improved energy efficiency compared to traditional technologies.
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https://www.nature.com/articles/s41467-024-54526-1
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