A research team led by NYU Tandon School of Engineering and KAIST developed a novel method to identify atomic-scale defects in hexagonal boron nitride (hBN), a material known as “white graphene” due to its excellent properties. By using specially designed transistors, they detected individual carbon atoms replacing boron atoms within hBN crystals. The technique involves analyzing random telegraph signals (RTS), small fluctuations in current, to pinpoint defects at the atomic level. This discovery advances the understanding of defects in 2D materials, potentially leading to innovations in quantum technologies and electronics, including more efficient quantum material platforms and secure communication devices.
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