Scientists develop fatigue-free ferroelectric material

Researchers from the Chinese Academy of Sciences have developed a fatigue-free ferroelectric material using sliding ferroelectricity. This innovation addresses the common issue of performance degradation in conventional ferroelectric materials due to polarization fatigue. The new material, created with a bilayer 3R-MoS₂ dual-gate device, retains its memory performance even after extensive switching cycles. Theoretical calculations suggest that its fatigue-free property is due to immobile charged defects, providing a significant advancement for applications in non-volatile memory, sensing, and energy conversion devices.

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