This article discusses recent advancements in ferroelectric devices, emphasizing the integration of materials like hafnium zirconium oxide (HZO) in semiconductor technology. Ferroelectric materials exhibit a switchable polarization that can be used in different devices, such as ferroelectric field-effect transistors (FeFETs) and dynamic random-access memory (DRAM). The industry faces challenges in precisely controlling crystal structures and minimizing defects, which are critical for enhancing device performance, retention, and endurance. Collaboration between materials scientists and engineers is essential for optimizing these new devices and ensuring commercial viability.
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