The article “Unveiling the Pockels Coefficient of Ferroelectric Nitride ScAlN” explores the electro-optic properties of scandium-doped aluminum nitride (ScAlN), highlighting its potential as a CMOS-compatible alternative to traditional oxide ferroelectrics for photonic applications. ScAlN, known for its strong piezoelectric effect and compatibility with semiconductor manufacturing, could surpass traditional materials like lithium niobate (LN) in electro-optic performance, especially at high scandium concentrations. Through experimental analysis and theoretical modeling, the authors demonstrate that ScAlN exhibits an enhanced Pockels effect, especially in configurations with increased Sc content, making it promising for use in electro-optic modulators. The study also addresses challenges such as material preparation and device integration, showcasing a low-loss photonics platform utilizing ScAlN-on-insulator. This work lays the groundwork for further optimizing ScAlN in applications like telecommunications, optical computing, and quantum photonics.
For more details, please continue reading the full article under the following link:
https://www.nature.com/articles/s41467-024-53895-x
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