Updating the textbook on polarization in gallium nitride to optimize wide bandgap semiconductors

Researchers from the University of Michigan have updated the understanding of polarization in gallium nitride, a material used in advanced electronic and optoelectronic devices. Previous theoretical models used incorrect reference structures, leading to significant discrepancies. By using a hexagonal reference structure, the researchers aligned experimental and theoretical results, enhancing the material’s electronic properties. This new understanding of polarization could drive the development of smaller, faster, and more efficient devices, impacting fields like clean energy catalysis and quantum technology.

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