This article highlights a breakthrough in p-type field-effect transistors (FETs) using two-dimensional (2D) materials, specifically molybdenum diselenide (MoSe₂) and tungsten diselenide (WSe₂). Researchers at Penn State developed a novel strategy combining substitutional doping and thickness control to address performance limitations of 2D p-type transistors. By doping the contact regions more heavily while maintaining thinner, lightly doped mid-channel regions, the team significantly reduced contact resistance, achieving high ON-currents and efficient gate control. This approach, coupled with advanced fabrication techniques, enhances the potential for 2D transistors in energy-efficient electronics, paving the way for next-generation circuits and complementing silicon-based technology. Future goals include scaling production with large-area growth methods like chemical vapor deposition (CVD).
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