This article outlines Intel’s latest advancements showcased at IEDM 2024, focusing on atomically-thin 2D transistors, innovative chip packaging, and advanced interconnect technologies. Intel presented breakthroughs in Gate-All-Around (GAA) RibbonFET transistors, transitioning from traditional FinFET designs to nanosheets for improved performance and scalability. The company is also exploring atomically-thin 2D materials like transition metal dichalcogenides (TMDs) for future transistor technologies. In chip packaging, Intel introduced Selective Layer Transfer (SLT) for efficient chip-to-wafer assembly and unveiled EMIB-T, a new interconnect solution using TSVs for high-speed, low-power communication. These developments aim to enhance semiconductor efficiency, scaling, and integration for next-generation computing applications.
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