Scientists at Berkeley Lab have developed “FerroX,” a 3D simulation tool to enhance energy-efficient microelectronics by uncovering the atomistic origins of negative capacitance in ferroelectric materials. Negative capacitance allows materials to store more charge at lower voltages, potentially revolutionizing memory and logic devices. By simulating the structure of ferroelectric thin films, FerroX helps optimize their properties, accelerating the development of ultra-low-power transistors. This advance could lead to more efficient next-generation microchips.
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