This article describes how precise Fermi level engineering in the topological Weyl semimetal tantalum phosphide (TaP) was achieved using fast ion implantation. By adjusting hydrogen ion implantation, researchers fine-tuned the Fermi level to within millielectronvolts (meV) of the Weyl nodes, preserving the semimetal’s properties. This method maintains crystalline integrity and carrier mobility while enhancing control over quantum properties, making it a promising technique for future quantum materials.
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